A band gap engineering for the modification in electrical properties of Fe3O4 by Cu2+ doping for electronic and optoelectronic devices applications

Saleem, Shahroz and Jamee, Muhammad Hasnain and A. Alothman, Asma and Mayzan, Mohd Zul Hilmi and Yousa, Talha and Ahmad, Muhammad Rehan and Ali, Asad and Zaman, Abid (2023) A band gap engineering for the modification in electrical properties of Fe3O4 by Cu2+ doping for electronic and optoelectronic devices applications. Journal of Sol-Gel Science and Technology. pp. 1-12.

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Official URL: https://doi.org/10.1007/s10971-023-06287-4

Abstract

Magnetite nanoparticles (α-Fe3O4) were successfully prepared by a chemical co-precipitation technique. Modification in electrical properties of α-Fe3O4 by Cu2+ dopant for the modification in electrical properties was deliberated. As the Cu2+ dopant content increased from 5 to 10%, the average crystallite size decreased from 2.96 to 2.93 nm. The synthesized sample doped with 5% exhibited the porous nature and least agglomeration. The optical studies revealed that energy band gap increased from 1.76–1.83 eV by enhancing Cu2+ content from 5 to 10%. The electrical studies revealed that the electrical conductivity decreased from 4.04 × 10−5 to 9.17 × 10−6 ℧ cm−1 The obtained consequences revealed that desired properties of Cu+2 doped Fe3O4 NPs can be obtained by controlling the substituting content in host material. The Fe3O4 NPs with Cu2+ doping exhibited higher electrical conductivity and become an excellent candidate for development of electronic and optoelectronic devices, such as, photodetector, sensors and energy storage devices.

Item Type:	Article
Uncontrolled Keywords:	Cu2+-doped Fe3O4 ● Structural ● Electrical properties ● Electrical and optoelectrical devices
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Applied Science and Technology > FAST
Depositing User:	Mr. Mohamad Zulkhibri Rahmad
Date Deposited:	20 Feb 2025 01:44
Last Modified:	20 Feb 2025 01:45
URI:	http://eprints.uthm.edu.my/id/eprint/11773

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