A study of variable I-region thickness effects on pin diode switching speed

Mat Jubadi, Warsuzarina and Mohamad, Mazita and Mohd Zin, Rosnah and Zinal , Nabiah (2010) A study of variable I-region thickness effects on pin diode switching speed. Other thesis, Universiti Tun Hussein Onn Malaysia.

[img]
Preview
PDF
564Kb

Abstract

The PIN diodes are widely used in RF, UHF and microwave circuits as it acts as a current controlled resistor at these frequencies. PIN diode performance is greatly influenced by the geometrical size of the device, especially in the intrinsic region. The change in geometry in the intrinsic will result the differences the most important parameters value of the PIN diode including the carrier lifetime and transit time kequency. In this research, the switchmg speed performance of PIN diode with different I-region layer thickness, W, is analyzed to study their correlation. A PIN diode structure has been designed in the Sentaums Technology Computer Aided Design (TCAD) tools.The I-layer thickness (or width) is varied from 5ohm to 100ohm in vestigate its effects on the current-voltage (I-V) characteristics and a few other important parameters have been extracted. These parameters are used to analyze the switching speed performance of the Silicon (Si) PIN diode. The study is validated by theory calculation as well as experimental work using practical diode with driver circuit.

Item Type:Thesis (Other)
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
ID Code:2432
Deposited By:Normajihan Abd. Rahman
Deposited On:18 Apr 2012 12:48
Last Modified:18 Apr 2012 12:48

Repository Staff Only: item control page