Investigation on titanium and titanium dioxide films fabrication processes in magnetron sputtering using optical spectroscopy technique

Mohamed Ali, Riyaz Ahmad and Nayan, Nafarizal (2013) Investigation on titanium and titanium dioxide films fabrication processes in magnetron sputtering using optical spectroscopy technique. In: International Conference on Nanoscience and Nanotechnology 2013 (NANO-SciTech 2013), 1-4 March 2013, Shah Alam, Selangor. (Unpublished)

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Abstract

Titanium dioxide (TiO,) is extensively studied to be used in optical thin film application due to its high refractive index, excellent optical transmission and photocatalytic properties. Applications of TiO, film include antibacterial and antireflective coating, dye-sensitised solar cell, wavelength-selective film and capacitor insulator. Currently, various techniques have been reported in Ti0,film fabrication such as reactive sputtering deposition, sol-gel process, chemical vapour deposition and ion beam assisted deposition. Magnetron sputtering is a sophisticated and reliable deposition technique to form precise film topography. Study shows that, ion bombardment profile during sputtering process tend to influence film properties such as the density, surface roughness, and crystallite. Thus, intensive study on the ionization mechanism and bombardment characteristic is needed to lead new knowledge on producing various types of TiO, film properties depends on application needs. In this paper, optical emission spectroscopy (OES) during sputtering plasma , deposition using Titanium (99.995%) as sputter target will be discussed. OES spectrum was used to analyse the real time plasma conditions under different power and working pressure environments. Distance of measurement point was fixed at 10 cm from the target. The discharged gases were Argon (Ar) and Oxygen (0,): During Ar discharge, Ti I emission lines ranging from 350 - 550 nm shows sign~ficant enhancement as discharge power increases. Increase in deposition power leads to more sputter of Ti atom in the plasma plume. In addition, the relative concentration of Ti atoms shows a steady increase in range of 5 - 20mTorr, while relative concentration of Ar shows a smooth drop from 10mTorr to 20mTorr gas pressure. During Ar + 0, discharge, Ti emission line intensity gradually decrease with the increasing working pressure. Reactive reaction activity between Ti, Ti', Ar and 0- will be presented and discussed during the workshop.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:TiO; film; magnetron sputtering; optical emission spectroscopy (OES)
Subjects:T Technology > TJ Mechanical engineering and machinery > TJ807-830 Renewable energy sources
ID Code:3640
Deposited By:Normajihan Abd. Rahman
Deposited On:13 Aug 2018 11:31
Last Modified:13 Aug 2018 11:31

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