Insulated gate bipolar transistor failure analysis in overvoltage condition

Kok, Boon Ching and Looi, Ming Sum and Goh, Hui Hwang (2012) Insulated gate bipolar transistor failure analysis in overvoltage condition. In: International Conference on Renewable Energies and Power Quality (ICREPQ 2012), 28-30 March 2012, Spain.

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Abstract

This paper presents the Insulated Gate Bipolar Transistor (IGBT) device failure analysis in overvoltage condition, which is a normal phenomenon occurring in a poor power quality utility system. In most of the IGBT gate drive design, conventionally it embeds the overvoltage protection circuit, however, the problem of short-circuit would still happen. Therefore, a detailed study had been carried out, where the overvoltage condition is being simulated to a boost Power Factor Correction (PFC) circuit implementing the IGBT as a switching device. A set of equations is derived for calculating the maximum junction temperature of an IGBT using the device switching characteristics during overvoltage condition. This approach can be used to determine the heat generation of IGBT device as well as identifying the root-cause of the short-circuit failure of hard switching design scheme during overvoltage condition.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:insulated gate bipolar transistor; switching losses; junction temperature; boost power factor correction
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
Divisions:Faculty of Electrical and Electronic Engineering > Department of Electrical Power Engineerings
ID Code:6099
Deposited By:Normajihan Abd. Rahman
Deposited On:17 Feb 2015 15:52
Last Modified:17 Feb 2015 15:52

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