Improved optoelectronics properties of ITO-based transparentconductive electrodes with the insertion of Ag/Ni under-layer

Ali, Ahmad Hadi and Abu Bakar, Ahmad Suhaimi and Hassan, Zainurah (2014) Improved optoelectronics properties of ITO-based transparentconductive electrodes with the insertion of Ag/Ni under-layer. Applied Surface Science, 315 . pp. 387-391. ISSN 0169-4332

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Official URL: http://dx.doi.org/10.1016/j.apsusc.2014.07.172

Abstract

ITO-based transparent conductive electrodes (TCE) with Ag/Ni thin metal under-layer were depositedon Si and glass substrates by thermal evaporator and RF magnetron sputtering system. Ceramic ITOwith purity of 99.99% and In2O3:SnO2weight ratio of 90:10 was used as a target at room tempera-ture. Post-deposition annealing was performed on the TCE at moderate temperature of 500◦C, 600◦Cand 700◦C under N2ambient. It was observed that the structural properties, optical transmittance,electrical characteristics and surface morphology were improved significantly after the post-annealingprocess. Post-annealed ITO/Ag/Ni at 600◦C shows the best quality of TCE with figure-of-merit (FOM)of 1.5 × 10−2n−1and high optical transmittance of 83% at 470 nm as well as very low electrical resis-tivity of 4.3 × 10−5n-cm. The crystalline quality and surface morphological plays an important role indetermining the quality of the TCE multilayer thin films properties.

Item Type:Article
Uncontrolled Keywords:ITO; Ag/Ni; sputtering; transparent conductive; electrode; annealinga
Subjects:Q Science > QD Chemistry
Divisions:Faculty of Science, Technology and Human Development > Department of Science and Mathematics
ID Code:6252
Deposited By:Normajihan Abd. Rahman
Deposited On:25 Jan 2015 16:47
Last Modified:25 Jan 2015 16:47

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