Band anti-crossing modelling on tailored Ga1-xInxNyAs1-y band gap energy based nitrogen fraction

Abd Samad, Muhammad Izzuddin and Mohamad, Khairul Anuar and Nordin, Mohammad Syahmi and Nayan, Nafarizal and Alias, Afishah and Othman, Marinah and Boland-Thoms, Adrian and Vickers, Anthony John (2019) Band anti-crossing modelling on tailored Ga1-xInxNyAs1-y band gap energy based nitrogen fraction. Universal Journal of Electrical and Electronic Engineering, 6 (5B). pp. 90-95.

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Abstract

This paper deals with a Band Anti-Crossing (BAC) modelling to investigate the tailoring of band gap energy of Ga1-xInxNyAs1-y alloy based on nitrogen fractions. Three different numerical methods have been adopted to estimate the extended state of conduction band (

Item Type:	Article
Uncontrolled Keywords:	band anti-crossing; dilute nitride; gallium arsenide; Ga1-xInxNyAs1-y alloy; band gap; 1.3 μm wavelength.
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
Divisions:	Faculty of Electrical and Electronic Engineering > Department of Electronic Enngineering
Depositing User:	Mr. Abdul Rahim Mat Radzuan
Date Deposited:	11 Aug 2021 08:04
Last Modified:	11 Aug 2021 08:04
URI:	http://eprints.uthm.edu.my/id/eprint/634

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