Improved optoelectronic characteristics of post-annealed Ti/AI/ITO transparent conducting electrodes deposited on n-GaN

Ali, Ahmad Hadi and Shuhaimi, Ahmad and Hassan, Zainuriah (2015) Improved optoelectronic characteristics of post-annealed Ti/AI/ITO transparent conducting electrodes deposited on n-GaN. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015), 8-9 June 2015, Universiti Sains Malaysia, Pulau Pinang.

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Abstract

We report on the improved structural, electrical and optical properties of the Ti/AI/ITO transparent conducting electrodes (TCEs) deposited on n-GaN. The TCEs were deposited by RF/DC magnetron sputtering under Ar ambient at room temperature. The as-deposited TCEs were annealed at 600°C in N₂ ambient for 15 min. The structural, electrical and optical properties of the TCEs were characterized by 2-Theta X-ray diffraction (XRD), atomic force microscope (AFM), Hall effects, I-V and UV-visible measurement system. From XRD measurement, significant ITO (222) and (411) peaks were observed after the sample was post-annealed at 600°C. Morphological analysis by AFM shows that surface roughness Rɋof the post-annealed sample is smoother as compared to the as-deposited sample. The electrical resistivity of the TCEs layer decreases to 8.607×10¯⁵ Ω-cm after the post-annealing process. Further analysis on the I-V characteristics reveals that to the post-annealed samples have better Ohmic behavior than the as-deposited sample. The post-annealed sample shows high optical transmittance characteristics in visible spectrum of ~95%. The figure of merit (FOM) of the as deposited and post-annealed samples are 2.39×10¯⁴ Ω¯¹ and 5.91×10¯² Ω¯¹ , respectively. Therefore, the post-annealed TCEs show the best electrical and optical quality due to improved structural and morphological characteristics.

Item Type:Conference or Workshop Item (Paper)
Subjects:T Technology > TA Engineering (General). Civil engineering (General) > TA1501-1820 Applied optics. Photonics
Divisions:Faculty of Science, Technology and Human Development > Department of Science
ID Code:6960
Deposited By:Mrs. Nurhayati Ali
Deposited On:06 Jul 2015 16:22
Last Modified:06 Jul 2015 16:22

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