Yusuf, Siti Idzura (2006) Simulation, fabrication and characterization of PMOS transistor device. Masters thesis, Universiti Tun Hussein Onn Malaysia.
|
Text
24p SITI IDZURA YUSUF.pdf Download (2MB) | Preview |
|
![[img]](http://eprints.uthm.edu.my/style/images/fileicons/text.png) |
Text (Copyright Declaration)
SITI IDZURA YUSUF COPYRIGHT DECLARATION.pdf Restricted to Repository staff only Download (2MB) | Request a copy |
|
|
Text (Full Text)
SITI IDZURA YUSUF WATERMARK.pdf Restricted to Registered users only Download (4MB) | Request a copy |
Abstract
In a low suppl y voltage CMO S technology , it is desirabl e to scal e threshold voltage and gate length for improvin g circuit performance . Therefore , a projec t ha s been carried out inside KUiTTHO's microelectroni c cleanroom to produc e a metho d that ha s bette r low power/low voltage current concentrat e on p-channe l (PMOS). A n experimen t w a s also don e to determin e the right paramete r value to b e use d for fabrication process such as oxidation process thickness rate, shee t resistanc e and meta l thickness. From the paramete r value obtained, 0.3 m m an d 0.5 m m PMO S transistor ha d bee n successfully produced . Fabrication simulation wa s performe d to produc e a 0.1 |am an d 0.3p.m PMO S transistor by using the ISE-TCA D software . Th e trade off betwee n threshold voltage (VTH), gat e length (LG) and thin oxide thickness (t o x ) are discusse d to determin e the characteristics of the transistors. It show s that for 0.3mm (toX = 860A ) PMO S transistor the value of VT H =-3.33V and 0.5 m m (t ^ = 910A), V T H value =-4.3V. From the simulation result show for 0.1 jim (to* = 200A), VT H = -0.314V an d for 0.5|im (400A) Vt h = -0.634V. Th e result shows that, with decreasin g gat e length an d oxide thickness will produc e lowe r value of threshold voltage . Minimu m value of threshold voltage can result in a better performanc e of transistor. Anothe r paramete r must b e taken into consideration such as leakage current, resistivity and conductivity to get a better design of PMO S transistor in futur e research.
| Item Type: | Thesis (Masters) |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics |
| Divisions: | Faculty of Electrical and Electronic Engineering > Department of Electrical Engineering |
| Depositing User: | Mrs. Sabarina Che Mat |
| Date Deposited: | 08 Jun 2022 02:10 |
| Last Modified: | 08 Jun 2022 02:10 |
| URI: | http://eprints.uthm.edu.my/id/eprint/7120 |
Actions (login required)
 |
View Item |