Deposited TiO2 thin films by atomic layer deposition (ALD) for optical properties

Hussin, Rosniza and Kwang, Leong Choy and Hou, Xiangui (2015) Deposited TiO2 thin films by atomic layer deposition (ALD) for optical properties. In: International Engineering Research and Innovation Symposium 2015 (IRIS), 12–13 September 2015, Putrajaya, Malaysia.



The thin films ceramic oxide can be fabricated by ALD because this technique promises to control the deposition on an atomic scale by sequentially dosing the surface with appropriate chemical precursors, and by promoting surface chemical reactions that are inherently self-limiting. TiO2 has been widely used in photocatalysts, due to its photosensitivity and thermal stability. TiO2 also has strong absorption in the UV range, at around 3.3 eV. ALD deposition cycle and temperature would determine the surface morphology of TiO2 thin films from a very smooth surface to a rough surface, which is important for their functional applications. The combined results of XRD and AFM show that the deposition temperature played an important role in the growth of TiO2 thin films and the phase transition from amorphous to anatase. These results demonstrated a self-limiting of 0.017 - 0.024 nm/cycle growth of the TiO2 thin films using TTIP and H2O, at deposition temperatures ranging from 100°C to 300°C. The optical properties of TiO2 thin films were also influenced by the deposition temperature. In addition, UV luminescence (at 353 nm) was present in the TiO2 thin films deposited at 200°C whereas there was no UV luminescence for pure bulk TiO2.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:Atomic Layer Deposition (ALD); TiO2 (Titanium Oxide); thin films; deposition; optical properties
Subjects:T Technology > TP Chemical technology > TP155-156 Chemical engineering
ID Code:7315
Deposited By:Normajihan Abd. Rahman
Deposited On:08 Oct 2015 14:54
Last Modified:08 Oct 2015 14:54

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