Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires

Ameruddin, Amira Saryati and Caroff, P. and Tan, H. H. and Jagadish, C. and Dubrovskii, V. G. (2015) Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires. Nanoscale, 7 . pp. 16266-16272. ISSN 2040-3364

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Official URL: http://pubs.rsc.org/is/content/articlelanding/2015...

Abstract

InGaAs nanowires offer great promise in fundamental studies of ternary compound semiconductors with variable composition and opens up a wide range of applications due to their bandgap tunability and high carrier mobility. Here, we report a study on the growth of Au-seeded InGaAs nanowires by metal–organic vapour phase epitaxy and present a model to explain the mechanisms that govern the growth and composition evolution in ternary III–V nanowires. The model allows us to further understand the limitations on the growth rate and incorporation of the two group III species imposed by the deposition conditions and some intrinsic properties of the material transport and nucleation. Within the model, the evolution of InGaAs nanowire growth rate and composition with particle size, temperature and V/III ratio is described and correlates very well with experimental findings. The understanding gained in this study should be useful for the controlled fabrication of tunable ternary nanowires for various applications.

Item Type:Article
Subjects:T Technology > T Technology (General)
Divisions:Faculty of Science, Technology and Human Development > Department of Science
ID Code:8166
Deposited By:Normajihan Abd. Rahman
Deposited On:25 Apr 2017 15:53
Last Modified:25 Apr 2017 15:53

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