High figure of merit of the post-annealed Ti/Al/ITO transparent conductive contacts sputter deposited on n-GaN

Ali, Ahmad Hadi and Hassan, Zainurah and Shuhaimi, Ahmad (2016) High figure of merit of the post-annealed Ti/Al/ITO transparent conductive contacts sputter deposited on n-GaN. Journal of Alloys and Compounds, 681 . pp. 186-190. ISSN 0925-8388

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Official URL: http://dx.doi.org/10.1016/j.jallcom.2016.04.123

Abstract

This paper reports on the enhanced electrical and optical characteristics of Ti/Al/ITO transparent conductive contacts (TCC) deposited on n-GaN for light emitting device applications. Ti/Al thin metal layer was inserted under the top ITO transparent conductive oxides (TCO) in order to improve the electrical characteristics of the TCC. The TCC multi-layer was deposited on n-GaN by magnetron sputtering system in room temperature. Post-annealing treatment was conducted on the TCC after the deposition process at 600 'C for 15 min. TCC sample analysis was conducted in order to determine the structural, morphological, electrical and optical characteristics of the samples. The post-annealed sample shows improved crystalline structure with smoother surface morphological of TCC. The electrical resistivity and optical transmittance of the post-annealed sample improved significantly as compared to the as-deposited samples. The measured electrical resistivity and optical transmittance of the post-annealed sample is 8.607 x 10-5 U-cm and 95%, respectively resulted in high figure of merit of 5.91 x 10-2 U-1.

Item Type:Article
Uncontrolled Keywords:figure of merit; annealing; Ti/Al; indium tin oxides; sputtering; n-GaN
Subjects:T Technology > T Technology (General)
Divisions:Faculty of Science, Technology and Human Development > Department of Science
ID Code:8183
Deposited By:Normajihan Abd. Rahman
Deposited On:25 Apr 2017 15:53
Last Modified:25 Apr 2017 15:53

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