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Effect of anneal temperature on fluorine doped tin oxide (FTO) nanostructured fabricated using hydrothermal method

Ahmad, M. K. and Marzuki, N. A. and Soon, C. F. and N., Nafarizal and Sanudin, R. and A. B., Suriani and Mohamed, A. and Shimomura, M. and Murakami, K. and Mamat, M. H. and Malek, M. F. (2016) Effect of anneal temperature on fluorine doped tin oxide (FTO) nanostructured fabricated using hydrothermal method. In: International Conference on Engineering, Science and Nanotechnology 2016 (ICESNANO 2016), 3–5 August 2016, Solo, Indonesia.

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FTO thin films were prepared by the hydrothermal method at anneal temperature of 100°C-400°C using pentahydrate stannic chloride (SnCl4.5H2O) and ammonium fluoride (NH4F) as precursors, and a mixture of DI water, acetone and hydrochloride as a solvent. The X-ray diffraction studies confirmed the tetragonal structure with polycrystalline nature. The preferred directions of crystal growth appeared in the diffractogram of FTO thin films prepared with different anneal temperature were correspond to the reflection from the (101), (200) and (211) planes, respectively. The electrical study reveals that the films have degenerate and exhibit n-type electrical conductivity. For films prepared at 400°C, the relatively higher transmittance of about 85-90% at 800nm has been observed. The transmission attained in this study is greater than the values reported for tin oxide films prepared at anneal temperature 400°C, from an aqueous solution of SnCl4.5H2O precursor. Resistivity is smaller than the value reported. The obtained results revealed that the structures and properties of the films were greatly affected by anneal temperature

Item Type: Conference or Workshop Item (Paper)
Subjects: Q Science > QD Chemistry
Divisions: Faculty of Electrical and Electronic Engineering > Department of Electronic Engineering
Depositing User: Mr. Mohammad Shaifulrip Ithnin
Date Deposited: 25 Sep 2018 08:20
Last Modified: 25 Sep 2018 08:20
URI: http://eprints.uthm.edu.my/id/eprint/10384
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