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Modulation of Sn concentration in ZnO nanorod array: intensification on the conductivity and humidity sensing properties

Ismail, A. S. and Mamat, M. H. and Shameem Banu, I. B. and Malek, M. F. and Yusoff, M. M. and Mohamed, R. and W. Ahmad, W. R. and Abdullah, M. A. R. and Md. Sin, N. D. and A. B., Suriani and Ahmad, M. K. and Rusop, M. (2018) Modulation of Sn concentration in ZnO nanorod array: intensification on the conductivity and humidity sensing properties. Journal of Materials Science: Materials in Electronics, 29 (14). pp. 12076-12088. ISSN 1573482X

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Abstract

Tin (Sn)-doped zinc oxide (ZnO) nanorod arrays (TZO) were synthesized onto aluminum-doped ZnO-coated glass substrate via a facile sonicated sol–gel immersion method for humidity sensor applications. These nanorod arrays were grown at different Sn concentrations ranging from 0.6 to 3 at.%. X-ray diffraction patterns showed that the deposited TZO arrays exhibited a wurtzite structure. The stress/strain condition of the ZnO film metamorphosed from tensile strain/compressive stress to compressive strain/tensile stress when the Sn concentrations increased. Results indicated that 1 at.% Sn doping of TZO, which has the lowest tensile stress of 0.14 GPa, generated the highest conductivity of 1.31 S cm− 1. In addition, 1 at.% Sn doping of TZO possessed superior sensitivity to a humidity of 3.36. These results revealed that the optimum performance of a humidity-sensing device can be obtained mainly by controlling the amount of extrinsic element in a ZnO film.

Item Type: Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
Divisions: Faculty of Electrical and Electronic Engineering > Department of Electronic Engineering
Depositing User: Mr. Mohammad Shaifulrip Ithnin
Date Deposited: 23 Jun 2019 06:52
Last Modified: 23 Jun 2019 06:52
URI: http://eprints.uthm.edu.my/id/eprint/11548
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