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Ternary iii-v nanowires for tunable optoelectronic applications

Ameruddin, Amira Saryati (2018) Ternary iii-v nanowires for tunable optoelectronic applications. In: Optical Fiber Laser Technology. Penerbit UTHM, pp. 127-140. ISBN 978-967-2216-63-6

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Abstract

Nanowires, nanowhiskers, nanobelts or in general, 1-dimensional (1D) semiconductor nanostructures have been the subject of intense research in the past few decades since the first attempts at understanding their growth mechanism by Wagner and Ellis in the 1960’s and Givargizov in the 1970’s [1], [2]. In the late 1990s, the research expanded significantly to include not only interest towards the understanding of fundamental nanowire growth, but also exploration of their electronic and optical properties as well as for device applications [3]–[11]. As part of the still expanding effort in the field of semiconductor nanowire research, this chapter is focused on trying to understand the fundamental nanowire mechanisms, especially of the ternary compound semiconductor, indium gallium arsenide (InGaAs or InxGa1-xAs). The study covered in the chapter provides insight into the foundation of ternary compound semiconductor nanowire growth, which is highly tunable for various device high-speed electronic and optoelectronic devices including lasers, photodiodes and solar cells.

Item Type: Book Section
Subjects: T Technology > T Technology (General)
Depositing User: Mr Abdul Rahim Mat Radzuan
Date Deposited: 31 Oct 2019 02:41
Last Modified: 31 Oct 2019 02:41
URI: http://eprints.uthm.edu.my/id/eprint/11852
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