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Simulation study of ballistic carbon nanotube field effect transistor

Sanudin, Rahmat and Ismail, Razali (2005) Simulation study of ballistic carbon nanotube field effect transistor. In: I E E E National Symposium On Microelectronics 2005, Kuching Sarawak.

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Abstract

Carbon nanotube is predicted as the most promising carbon nanostructure for future digital electronic application due to its superior electrical characteristics. One of the examples is the employment of CNT in fieldeffect transistor. Carbon nanotube field-effect transistors (CNFET) are extensively studied as a possible replacement for silicon MOSFET. Simulation study of ballistic transport of CNFET is carried out in this paper as a mean to measure performance limit of this device. I-V characteristic of ballistic CNFET is simulated through MATLAB program using surface-potentialbased model. The simulation result is presented and then compared with current silicon transistor technology. It is found that CNFET is comparable to silicon MOSFET

Item Type: Conference or Workshop Item (Paper)
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
Divisions: Faculty of Electrical and Electronic Engineering > Department of Electronic Engineering
Depositing User: Mrs Hasliza Hamdan
Date Deposited: 05 Oct 2011 04:20
Last Modified: 05 Oct 2011 04:20
URI: http://eprints.uthm.edu.my/id/eprint/1954
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