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Effect of thermal processes on al thin film in the present of nitrogen (N2) gas

Mohamed Ali, Riyaz Ahmad and Mohamed, Ahmad Nasrull and Nayan, Nafarizal Effect of thermal processes on al thin film in the present of nitrogen (N2) gas. Compilation of Papers - VOLUME 1.


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The morphology evolution of Aluminum (Al) thin film in the present of Nitrogen (N2) gas has been studied. The Aluminum thin film has been fabricated on Silicon (Si) substrate using Aluminum evaporation system. Then, the substrate were placed inside the furnace with the present of N 2gas for approximately 30 minutes at certain temperature range from room temperature to 700 OC. The influence of the N2 gas to the Al thin film in furnace were characterized by optical microscope, Scanning Electron Microscope (SEM), Energy Dispersive Spectrometer (EDS), I - V characterization and X- ray diffraction (XRD). It is found that, at above 600 OC, we observed that the colour of Al thin film was changed drastically. We expect that this is because of the formation of ALN on the Si substrate. This statement is proved by the XRD and EDS characterization resuls. In addition, the thin film has better resistivity than the thin film before thermal processing, which was evaluated from I - V characterization results. From the SEM images, we also found that the morphology of Aluminum thin film changed drastically for the temperature above 600 OC.

Item Type: Article
Uncontrolled Keywords: aluminum thin film; aluminum nitrate; nitrogen gas; silicon substrate
Subjects: T Technology > T Technology (General)
Divisions: Faculty of Electrical and Electronic Engineering > Department of Electrical Technology
Depositing User: Normajihan Abd. Rahman
Date Deposited: 06 Jun 2012 03:29
Last Modified: 06 Jun 2012 03:29
URI: http://eprints.uthm.edu.my/id/eprint/2475
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