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Comparison on i-v performances of silicon pin diode towards width variations

Shuhaimi, Nurain Izzati and Mohamad , Mazita and Mat Jubadi, Warsuzarina and Tugiman, Ruzaini and Zinal , Nabiah and Mohd Zin, Rosnah (2010) Comparison on i-v performances of silicon pin diode towards width variations. In: IEEE International Conference on Semiconductor Electronics (ICSE2010), 28-30 June 2010, Melaka, Malaysia .

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Abstract

The performance of the PIN diode is very much depends on the chip geometry and the semiconductor material used, especially in the intrinsic region. The biasing voltage applied to the PIN diode determines the amount holes and electrons injected into the intrinsic region and the values of its resistivity. This will give effect to the I-V performance of the PIN diode on its resistivity. This research studied the effects of width (and subsequently area) variations of intrinsic region of Silicon PIN diode on its I-V performance. The two dimensional structures and recipes of PIN diode are designed and simulated using Sentaurus TCAD tools. The thickness of PIN diode is kept at 40um while only the width is varied accordingly. Three variations of width have been chosen of width 90um, 80um and 70um in order to study the impacts of width accordingly. Three variations of width have been chosen of width variation has on the I-V performance. Based on the simulation result, it is found that the current level is proportional to the PIN structure width.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: pin diode; width; i-v; sentaurus
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
Divisions: Faculty of Electrical and Electronic Engineering > Department of Electronic Engineering
Depositing User: Normajihan Abd. Rahman
Date Deposited: 08 Feb 2013 04:02
Last Modified: 21 Jan 2015 07:28
URI: http://eprints.uthm.edu.my/id/eprint/3013
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