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Studies of N-type indium tin sulfide (InxSnyS)thin films using electrochemical deposition technique

Sahdan, Mohd Zainizan and Vequizo, J.J.M. and Haleem, Abdel and Rusop, M. and Ichimura, M. Studies of N-type indium tin sulfide (InxSnyS)thin films using electrochemical deposition technique. Photonics (ICP), 2011 IEEE 2nd International Conference.

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Tin sulfide (SnS) films usually possess p-type electrical conductivity. Indium tin sulfide (InxSnyS) thin films were deposited on indium-tin-oxide coated glass by electrochemical deposition from an aqueous solution containing Na2S2O3, SnSO4, and In2(SO4)3. Different concentration of In2(SO4)3 was added to observe the effects on the structural and electrical properties. All thin films were deposited for the duration of 12 minutes. The thickness of the thin film was measured to be around 0.5 μm. The as-deposited thin films were characterized by scanning electron microscope, X-ray diffraction, Auger electron microscopy (AES) and photo-electro-chemical measurement We observed that the SnS surface morphologies changed when different concentration of indium was added. In this research, a transformation of p-type to n-type conductivity was revealed with additional of In2(SO4)3 greater than 1 mM concentration.

Item Type: Article
Uncontrolled Keywords: auger electron microscopy ; electrochemical deposition ; indium sulfide ; photoelectrochemical ; tin sulfide
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Electrical and Electronic Engineering > Department of Electronic Engineering
Depositing User: Norfauzan Md Sarwin
Date Deposited: 07 Nov 2012 04:26
Last Modified: 07 Nov 2012 04:26
URI: http://eprints.uthm.edu.my/id/eprint/3165
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