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Topology of 2 input subnanowatt XOR gate in 65nm CMOS technology

Ahmad , Nabihah and Hasan, Rezaul Topology of 2 input subnanowatt XOR gate in 65nm CMOS technology. In: IEEE International Conference on Semiconductor Electronics 2012 (ICSE 2012), 19-21 September 2012, Kuala Lumpur .

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Exclusive OR (XOR) gate is highly utilized in various digital system applications such as full adder, comparator, parity generator and encryption processor, which leads to increased in the interests to enhance the performance of XOR gate. A novel design of low power and high performance XOR gate using six transistors application are proposed in this paper. The new XOR gate has been compared with previous design in term of power,delay and power-delay product (PDP). The XOR gate is simulated using Cadence Spectre with 65nm Complementary Metal Oxide Semiconductor (CMOS) technology at different supply voltages with a range of 0.6V to 1.2V. The area of the core circuit is approximately 48 μm2. The critical path propagation delay is 1.585 ns with power dissipation of only around 3.256 fW at 0.8V supply voltage .The results demonstrate that the proposed design achieve a lowest power consumption and high speed with respect to other designs.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: XOR gate; low power; VLSI
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Electrical and Electronic Engineering > Department of Robotic and Mechatronic Engineering
Depositing User: Ms Aryanti Ahmad
Date Deposited: 11 Dec 2012 07:42
Last Modified: 11 Dec 2012 07:42
URI: http://eprints.uthm.edu.my/id/eprint/3356
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