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Gate control coefficient effect on CNFET characteristic

Sanudin, Rahmat and Ma'radzi, Ahmad Alabqari and Nayan, Nafarizal (2008) Gate control coefficient effect on CNFET characteristic. In: Nanoscience and Nanotechnology, 18-21 November 2008, Selangor, Malaysia. (Unpublished)

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Abstract

The development of carbon nanotube field-effect transistor (CNFET) as alternative to existing transistor technology has long been published and discussed. The emergence of this device offers new material and structure in building a transistor. This paper intends to do an analysis of gate control coefficient effect on CNFET performance. The analysis is based on simulation study of current-voltage (I-V) characteristic of ballistic CNFET. The simulation study used the MOSFET-like CNFET mathematical model to establish the device output characteristic. Based on the analysis of simulation result, it is found that the gate control coefficient contributes to a significant effect on the performance of CNFET. The result also shown the parameter could help to improve the device performance in terms of its output and response as well. Nevertheless, the characteristic of the carbon nanotube that acts as the channel is totally important in determining the performance of the transistor as a whole.

Item Type: Conference or Workshop Item (Paper)
Subjects: T Technology > TJ Mechanical engineering and machinery > TJ212-225 Control engineering systems. Automatic machinery (General)
Depositing User: Normajihan Abd. Rahman
Date Deposited: 13 Aug 2018 03:43
Last Modified: 13 Aug 2018 03:43
URI: http://eprints.uthm.edu.my/id/eprint/3780
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