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The effect of substrate on Ti02 thin films deposited by atomic layer deposition (ALD)

Hussin, Rosniza and Kwang-Leong, Choy and Xiang , Hui Hou (2014) The effect of substrate on Ti02 thin films deposited by atomic layer deposition (ALD). In: International Conference on X-Ray & Related Technique in Research and Industry (ICXRI2014), 11-13 August 2014, Johor Bahru, Johor.

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Abstract

ALD is a precision growth technique that can deposit either amorphous or polycrystalline thin films on a variety of substrates. The difference in substrate can cause a variation in the ALD process, even it is carried out using the same reactants and deposition conditions [I]. Ti02 thin films were grown using TTIP (Titanium isopropoxide) ALD on silicon wafers, glass slides, and stainless steel plates in order to - study the effect of substrates on the growth of TiO2. The thin films were analyzed using Xray Diffraction (XRD), Raman Spectroscopy and Atomic Force Microscope (AFM). From XRD analysis were indicates the main peak for anatase (101) (28= 25.3) was observed from the XRD patterns for Ti02 on all substrates. The results show that crystalline Ti02 thin films can easily grow on a crystal substrate rather than on an amorphous substrate.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Atomic Layer Deposition (ALD); thin films; titanium oxide (Ti02) X-Ray diffraction; substrate
Subjects: T Technology > TA Engineering (General). Civil engineering (General) > TA401-492 Materials of engineering and construction. Mechanics of materials
Divisions: Faculty of Mechanical and Manufacturing Engineering > Department of Materials Engineering and Design
Depositing User: Normajihan Abd. Rahman
Date Deposited: 07 Apr 2015 04:27
Last Modified: 07 Apr 2015 04:27
URI: http://eprints.uthm.edu.my/id/eprint/5906
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