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Improved optoelectronics properties of ITO-based transparentconductive electrodes with the insertion of Ag/Ni under-layer

Ali, Ahmad Hadi and Abu Bakar, Ahmad Suhaimi and Hassan, Zainurah (2014) Improved optoelectronics properties of ITO-based transparentconductive electrodes with the insertion of Ag/Ni under-layer. Applied Surface Science, 315. pp. 387-391. ISSN 0169-4332

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Abstract

ITO-based transparent conductive electrodes (TCE) with Ag/Ni thin metal under-layer were depositedon Si and glass substrates by thermal evaporator and RF magnetron sputtering system. Ceramic ITOwith purity of 99.99% and In2O3:SnO2weight ratio of 90:10 was used as a target at room tempera-ture. Post-deposition annealing was performed on the TCE at moderate temperature of 500◦C, 600◦Cand 700◦C under N2ambient. It was observed that the structural properties, optical transmittance,electrical characteristics and surface morphology were improved significantly after the post-annealingprocess. Post-annealed ITO/Ag/Ni at 600◦C shows the best quality of TCE with figure-of-merit (FOM)of 1.5 × 10−2n−1and high optical transmittance of 83% at 470 nm as well as very low electrical resis-tivity of 4.3 × 10−5n-cm. The crystalline quality and surface morphological plays an important role indetermining the quality of the TCE multilayer thin films properties.

Item Type: Article
Uncontrolled Keywords: ITO; Ag/Ni; sputtering; transparent conductive; electrode; annealinga
Subjects: Q Science > QD Chemistry
Divisions: Faculty of Applied Science and Technology > Department of Science and Mathematics
Depositing User: Normajihan Abd. Rahman
Date Deposited: 25 Jan 2015 08:47
Last Modified: 25 Jan 2015 08:47
URI: http://eprints.uthm.edu.my/id/eprint/6252
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