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Investigation of threshold voltage variations in NMOS

Musa, Rabiatul Adawiyah and Sanudin, Rahmat (2015) Investigation of threshold voltage variations in NMOS. In: International Conference on Electrical and Electronic Engineering 2015 (IC3E 2015), 10-11 August 2015 , Melaka, Malaysia.


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As MOSFET is rigorously scaled down to meet the expected circuit evolution according to the Moore’s Law, the issue of threshold voltage (VTH) becoming more dominant in transistor operation. This parameters is worth to be investigated since it dictates the performance of the transistor operation. On top of that, channel length modulation, which related to transistor scaling, plays dominant role in affecting the VTH. The investigation is performed primarily based on transistor modelling that relates the parameters of interest in device operation. It is carried out through simulation work of 45 nm n-type MOSFET (NMOS) in Sentaurus TCAD to see changes in transistor operation. Simulation results suggest that oxide thickness and dopant cocncentration in substrate have significant effect on the VTH. The changes in both parameters are related to changes in oxide layer capacitance and number of minority carriers that essentially affect the VTH.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: threshold voltage; submicron MOSFET; oxide thickness
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK3001-3521 Distribution or transmission of electric power
Divisions: Faculty of Electrical and Electronic Engineering > Department of Electronic Engineering
Depositing User: Normajihan Abd. Rahman
Date Deposited: 29 Oct 2015 06:18
Last Modified: 29 Oct 2015 06:18
URI: http://eprints.uthm.edu.my/id/eprint/7154
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