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Investigation of threshold voltage and transconductance variations in PMOS

Hasbulah, Siti Hajar Marni and Sanudin,, Rahmat (2015) Investigation of threshold voltage and transconductance variations in PMOS. In: International Conference on Electrical and Electronic Engineering 2015 (IC3E 2015), 10-11 August 2015 , Melaka, Malaysia.


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Scaling process of MOSFET has yielded great benefit in term of processor technology evolution. However, it is worth to note that the scaling process also affects the electrical parameters as well. It is expected that as MOSFET gradually scaled into the submicron regime, the variation of electrical parameters due to scaling becomes more apparent. The study is carried out through simulation work of 45 nm p-type MOSFET (PMOS) using a commercial device simulator. This tool is used as a medium to observe changes in threshold voltage (VTH) and transconductance (gm). Changes of both parameters are investigated against three factors; oxide thickness (tox), doping concentration of dopant in substrate and doping energy. Observation in simulation results suggest that increment in both tox and doping energy increases VTH and reduces gm. In contrast, increment in doping concentration of dopant improves gm and trims VTH. Analysis of results deduces that the variations of both VTH and gm against those three factors are related to number of free carriers during device operation.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: threshold voltage; transconductance; submicron PMOS
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
Divisions: Faculty of Electrical and Electronic Engineering > Department of Electronic Engineering
Depositing User: Normajihan Abd. Rahman
Date Deposited: 26 Oct 2015 08:00
Last Modified: 26 Oct 2015 08:00
URI: http://eprints.uthm.edu.my/id/eprint/7185
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