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Characterisation of nanocrystalline diamond coating deposited via hot filament chemical vapour deposition method with various seeding methods

Yong, Tze Mi and Hamzah, E. and Mat Yajid, M. A. (2015) Characterisation of nanocrystalline diamond coating deposited via hot filament chemical vapour deposition method with various seeding methods. Jurnal Teknologi, 75 (7). pp. 51-59. ISSN 2180-3722

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Abstract

A nanocrystalline diamond bilayer has been deposited via hot filament chemical vapour deposition method. The bilayer has been produced by two different deposition parameters. The first is by limiting microcrystalline diamond growth and the second layer by pulsing additional oxygen gas into the system. The two layers become indistinguishable after the deposition ends. The pretreatment of the substrate, tungsten carbide has been varied i.e. its various seeding sizes (<0.1 μm synthetic, <0.5 μm synthetic, <0.25 μm natural, <0.5 μm natural, and <1 μm natural); with and without hammering by silicon carbide. This set up is highly similar to that of previous work however the different deposition time has caused the microcrystalline diamond layer to be nanocrystalline diamond instead. Results presented are the optical and SEM (up to 100,000x magnification) images of both planar and cross-section of the diamond layer. AFM gave topographical analysis of the diamond layer. The results show that the thickness is about 1.7 μm, top layer diamond about 100 nm in size and are indeed diamonds by XRD and Raman.

Item Type: Article
Uncontrolled Keywords: nanocrystalline diamond; diamond multilayers; characterization; HFCVD; tungsten carbide
Subjects: T Technology > TA Engineering (General). Civil engineering (General) > TA401-492 Materials of engineering and construction. Mechanics of materials
Divisions: Faculty of Engineering Technology > Department of Mechanical Engineering Technology
Depositing User: Normajihan Abd. Rahman
Date Deposited: 07 Aug 2016 08:58
Last Modified: 07 Aug 2016 08:58
URI: http://eprints.uthm.edu.my/id/eprint/8205
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