UTHM Institutional Repository

Compositional and structural characterization of heterostructure InGaN-based light-emitting diode by high resolution x-ray diffraction

Ali, Ahmad Hadi and Shuhaimi, Ahmad and Hassan, Zainuriah and Yusof, Yushamdan (2013) Compositional and structural characterization of heterostructure InGaN-based light-emitting diode by high resolution x-ray diffraction. Advanced Materials Research, 620. pp. 22-27. ISSN 10226680

Full text not available from this repository.

Abstract

This paper focuses on the compositional and structural characterization of InGaN-based light-emitting diode (LED) using high resolution x-ray diffraction (HRXRD) system. The LED was epitaxially grown on Si (111) substrate that comprises of In0.11Ga0.89N multi-quantum-well (MQW) active layer. Phase analysis 2θ-scan proved the composition of GaN (0002) and (0004) at 34.63o and 72.98o, respectively. Rocking curve φ-scan showed six significant peaks of the hexagonal GaN structures with consistent angular gaps of ~60o. From x-ray rocking curve (XRC) ω-scan, screw and mix dislocation density is found as 2.85 × 109 cm-2, while pure edge dislocation density is found as 2.23 × 1011 cm-2.

Item Type: Article
Uncontrolled Keywords: InGaN; light-emitting diode; x-ray diffraction; multi-quantum-well
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
Depositing User: Mr. Mohammad Shaifulrip Ithnin
Date Deposited: 13 Aug 2018 03:21
Last Modified: 13 Aug 2018 03:21
URI: http://eprints.uthm.edu.my/id/eprint/9722
Statistic Details: View Download Statistic

Actions (login required)

View Item View Item