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Influence of growth temperature and V/III ratio on Au-assisted InxGa1-xAs nanowires

Ameruddin, A. S. and Tan, H. H. and Fonseka, H. A. and Gao, Q. and Wong-Leung, J. and Parkinson, P. and Breuer, S. and Jagadish, C. (2012) Influence of growth temperature and V/III ratio on Au-assisted InxGa1-xAs nanowires. In: 2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD), 12-14 Dec 2012, Melbourne, VIC, Australia .

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InxGa1-xAs nanowires were grown using metal-organic chemical vapour deposition (MOCVD) with various growth temperatures and V/III ratios. The morphology of these nanowires and the composition distribution along the nanowire were studied as a function of these growth parameters. With higher growth temperature and lower V/III ratio, the tapering of the nanowires is reduced. However, the incorporation of Ga in the nanowires is also reduced with lower V/III ratio. The composition distribution along the nanowires is non-uniform with typically In-rich bases and Ga-rich tips.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Nanowires; morphology; indium gallium arsenide; gallium; educational institutions; MOCVD
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
Depositing User: Mr. Mohammad Shaifulrip Ithnin
Date Deposited: 13 Aug 2018 03:32
Last Modified: 13 Aug 2018 03:32
URI: http://eprints.uthm.edu.my/id/eprint/9723
Statistic Details: View Download Statistic

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