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Post-annealing effects on ITO thin films RF sputtered at different thicknesses on Si and glass

Ali, Ahmad Hadi and Shuhaimi, Ahmad and Mohd Bakhori, Siti Khadijah and Hassan, Zainuriah (2014) Post-annealing effects on ITO thin films RF sputtered at different thicknesses on Si and glass. Advanced Materials Research, 925. pp. 411-415. ISSN 1662-8985

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We report on electrical, optical and surface morphological characteristics of indium tin oxide (ITO) thin films. The ITO was deposited by radio frequency (RF) magnetron sputtering on Si and glass substrates at different thicknesses of 125 nm and 239 nm. Post-annealing treatment was conducted on the samples at temperature of 500°C and 600°C. From Hall Effect measurement, the lowest resistivity was measured as 4.4 × 10⁻⁴ Ωcm and 4.5 × 10⁻⁴Ωcm corresponding to the 239 nm and 125 nm ITO sample, respectively, after post-annealed at 600°C. Using UV-Vis spectrophotometer, the highest transmittance of ̴84% at 470 nm was observed with respect to the 125 nm ITO thin films after post-annealed at 500°C. Furthermore, the 500°C post-annealed 125 nm thin film shows highest carrier concentrations of more than 1021 cm⁻ᵌ and smoothest surface morphology of 0.5 nm root-mean-square, RMS. It is clearly shown that post-annealing treatment on ITO thin films is able to enhance the electrical and optical transmittance properties as compared to the as deposited films.

Item Type: Article
Uncontrolled Keywords: ITO; Annealing; Sputtering; Si; Electrical resistivity.
Subjects: Q Science > QC Physics
Divisions: Faculty of Applied Science and Technology > Department of Science
Depositing User: Normajihan Abd. Rahman
Date Deposited: 28 Feb 2018 06:44
Last Modified: 28 Feb 2018 06:44
URI: http://eprints.uthm.edu.my/id/eprint/9791
Statistic Details: View Download Statistic

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