Influence of thickness on tunability performance of plasma sputtered indium tin oxide as Q-switcher

Zalkepali, N U H H and Mahmud, N N H E N and Awang, N A and Muhammad, N A M and Zamri, A Z M (2023) Influence of thickness on tunability performance of plasma sputtered indium tin oxide as Q-switcher. Laser Physics. pp. 1-9. ISSN 1555-6611

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Abstract

We successfully investigated the influence of thickness on the tunability performance of plasma-sputtered indium tin oxide (ITO) as a Q-switcher. ITO is coated using direct current magnetron sputtering techniques with sputtering times of 150 s, 250 s, and 350 s to generate excellent quality ITO. Filmetrics measures the thickness, yielding 17.80 nm, 30.70 nm, and 38.90 nm, respectively. A stable Q-switched pulse is achieved at an operating wavelength and peak power of 1562.30 nm and −6.47 dBm for the thickness of 17.80 nm, 1561.40 nm and −3.19 dBm for the thickness of 30.70 nm, and 1560.2 nm and −2.44 dBm for the thickness of 38.90 nm. The thickness of 38.90 nm exhibit a high repetition rate of 43.60 kHz and narrow pulse width of 4.83 µs compared to other thickness. Employing the tunable bandpass filter in the laser ring cavity gives the wide-tuning of the wavelength range of 19.69 nm, 31.86 nm, and 36.59 nm for the thickness of 17.80 nm, 30.70 nm, and 38.90 nm, respectively. The tunability of Q-switched with the thicknesses of 30.70 nm and 38.90 nm is realized in the region of C-band to L-band. Regarding the authors’ expertise, this seems to be the first proposed influence of thickness on the tunability of plasma sputtered ITO that serves as saturable absorber in a Q-switched pulse.

Item Type:	Article
Uncontrolled Keywords:	indium tin oxide, saturable absorber, Q-switched pulse, thickness
Subjects:	T Technology > T Technology (General)
Divisions:	Faculty of Applied Science and Technology > FAST
Depositing User:	Mr. Mohamad Zulkhibri Rahmad
Date Deposited:	01 Aug 2024 02:51
Last Modified:	01 Aug 2024 02:51
URI:	http://eprints.uthm.edu.my/id/eprint/11446

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