Surface morphology abd optical properties of self assembled in GaAs nanostructures grown GaAs substrate using MOVCD

Ameruddin, Amira Saryati and Aryanto, Didik and Othaman, Zukafli and Ismail, Abd Khamim (2010) Surface morphology abd optical properties of self assembled in GaAs nanostructures grown GaAs substrate using MOVCD. In: Regional Annual Fundamental Science Symposium, 8-9 June 2010, Grand Season Hotel, Kuala Lumpur.

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Abstract

Single layer and five-stacked nominal Ino sGao jAs nanostructures have beat successfully grown on 200nm GaAs buffer layer using metal-organic chemical vapor deposition (MOCVD). Surface morphology of In0.jOa0.5As nanostructures were investigated using atomic force microscopy (AFM). The size, density, shape and uniformity of distribution of In0.sGa0.5As nanostructures with varied deposition time were analyzed. Uniform distribution of islands with the mean size of 18 nm wide and 5 nm high was achieved for (£<owth time of 2.0 seconds. The density of the islands on the surface is 3.82 x lO^cm"5. The optical properties of the five-stacked structure were characterized using photoluminescence measurements. Peaks ranging from 1060nm to 1080nm were obtained. However, there were also peaks rising at about 1270nm in bimodal sized samples. The high-resolution x-ray diffraction shows good quality of stacking indicated by the narrow satellite peaks and the long range orders of the satellite pedes.

Item Type:Conference or Workshop Item (Paper)
Subjects:Q Science > QC Physics
Divisions:Faculty of Science, Technology and Human Development > Department of Science and Mathematics
ID Code:1902
Deposited By:Faizul Sahari
Deposited On:05 Oct 2011 11:44
Last Modified:05 Oct 2011 11:44

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