Correlation between plasma properties and its deposited thin film of RF magnetron sputtering system using Zn target

Nayan, Nafarizal (2010) Correlation between plasma properties and its deposited thin film of RF magnetron sputtering system using Zn target. Universiti Tun Hussein Onn Malaysia. (Unpublished)

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Abstract

In the present work, we investigate the fundamental properties of magnetron sputtering plasma using Zn target and its deposited Zn thin film. The magnetron sputtering plasma was produced using radio frequency (RF) power supply and Argon (Ar) as ambient gas. A Langmuir probe was used to collect the current from the plasma and from the current intensity, we calculate the election density and electron temperature. The properties of Zn sputtering plasma at various discharge conditions were studied. At the RF power ranging from 20 to 100 W and gas pressure 5mTorr, we found that the electron increased drastically from 6x10'9 to 1x10'10 cm-3 when the discharge gas pressure increased from 5 to 10mTorr. The electron microscope images show that the grain size of Zn thin film increase when the discharge power is increased. This may be due to the enhancement of plasma density and sputtered Zn density.

Item Type:Other
Subjects:Q Science > QC Physics
Divisions:Faculty of Electrical and Electronic Engineering > Department of Electronic Engineering
ID Code:3014
Deposited By:Normajihan Abd. Rahman
Deposited On:04 Mar 2013 10:39
Last Modified:12 Jan 2016 10:52

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