The effect of substrate on TiO2 thin films deposited by atomic layer deposition (ALD)

Hussin, Rosniza and Kwang, Leong Choy and Xianghui, Hou (2015) The effect of substrate on TiO2 thin films deposited by atomic layer deposition (ALD). Advanced Materials Research, 1087. pp. 147-151. ISSN 1022-6680

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"ALD is a precision growth technique that can deposit either amorphous or polycrystalline thin films on a variety of substrates. The difference in substrate can cause a variation in the ALD process, even it is carried out using the same reactants and deposition conditions [1]. TiO2 thin films were grown using TTIP (Titanium isopropoxide) ALD on silicon wafers, glass slides, and stainless steel plates in order to study the effect of substrates on the growth of TiO2 with 3,000 deposition cycles, at 300oC.The thin films were analyzed using Xray Diffraction (XRD), Raman Spectroscopy, Atomic Force Microscope (AFM) and Spectroscopic Ellipsometer. The XRD analysis indicates that the main diffraction peak of (101) (2_= 25.3) could be indexed to anatase TiO2, regardless the types of substrates. The results show that crystalline TiO2 thin films could be grown easily on a crystal substrate rather than on an amorphous substrate."

Item Type: Article
Uncontrolled Keywords: "Atomic Layer Deposition (ALD);TiO2 (Titanium Oxide); Thin films; Deposition;Substrate"
Subjects: T Technology > T Technology (General)
T Technology > TA Engineering (General). Civil engineering (General) > TA401-492 Materials of engineering and construction. Mechanics of materials
Divisions: Faculty of Engineering Technology > Department of Civil Engineering Technology
Depositing User: Mrs. Mashairani Ismail
Date Deposited: 23 Dec 2021 04:20
Last Modified: 23 Dec 2021 04:20

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