Gamma ray and neutron radiation effects on the electrical and structural properties of n-ZnO/p-CuGaO2 schottky diode

Mivolil, D. S. and Chee, Fuei Pien and Rasmidi, Rosfayanti and Alias, Afishah and Salleh, Saafie and Mohd Salleh, Khairul Anuar and Jalal Bayar, Abi Muttaqin (2020) Gamma ray and neutron radiation effects on the electrical and structural properties of n-ZnO/p-CuGaO2 schottky diode. ECS Journal of Solid State Science and Technology, 9 (4). pp. 1-9. ISSN 2162-8769

Text
AJ 2020 (276).pdf
Restricted to Registered users only
Download (2MB) | Request a copy

Official URL: https://dx.doi.org/10.1149/2162-8777/ab8f19

Abstract

This research focuses on the radiation tolerance of ZnO and CuGaO2 based semiconductor application for space borne application. In this research, n-ZnO/p-CuGaO2 based semiconductor devices were fabricated and exposed to gamma rays with increasing total ionizing dose (TID) and neutron fluence at different flux. Based on the I-V properties, the decrease in the turn-on voltage of the diode is noticeable with increasing radiation dose for both gamma and neutron flux exposure. The maximum turn-on-voltage of the fabricated diode was shown to be 1.5 V. Exposure towards gamma, shows that the turn-on is increased to 4.7 V at 200 kGy. However, the effect of neutron flux at 6.5 × 1015 n cm−2 shows a small significant effect on the turn on voltage of 1.7 V after irradiation. Results show moderate mitigation towards irradiation, indicating that n-ZnO/p-CuGaO2 thin film is capable of withstanding harsh radiation environment while still retaining its semiconductor as the changes in band gap ranges between 3 eV to 4 eV at post-irradiation.

Item Type:	Article
Uncontrolled Keywords:	NIL
Subjects:	T Technology > T Technology (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Applied Science and Technology > Department of Physics and Chemistry
Depositing User:	Miss Afiqah Faiqah Mohd Hafiz
Date Deposited:	30 Jan 2022 02:45
Last Modified:	30 Jan 2022 02:45
URI:	http://eprints.uthm.edu.my/id/eprint/6317

Actions (login required)

View Item