High figure of merit of the post-annealed Ti/Al/ITO transparent conductive contacts sputter deposited on n-GaN

Ali, Ahmad Hadi and Hassan, Zainuriah and Shuhaimi, Ahmad (2016) High figure of merit of the post-annealed Ti/Al/ITO transparent conductive contacts sputter deposited on n-GaN. Journal of Alloys and Compounds, 681 . pp. 186-190. ISSN 09258388

Full text not available from this repository.

Abstract

This paper reports on the enhanced electrical and optical characteristics of Ti/Al/ITO transparent conductive contacts (TCC) deposited on n-GaN for light emitting device applications. Ti/Al thin metal layer was inserted under the top ITO transparent conductive oxides (TCO) in order to improve the electrical characteristics of the TCC. The TCC multi-layer was deposited on n-GaN by magnetron sputtering system in room temperature. Post-annealing treatment was conducted on the TCC after the deposition process at 600 degree Celsius for 15 min. TCC sample analysis was conducted in order to determine the structural, morphological, electrical and optical characteristics of the samples. The post-annealed sample shows improved crystalline structure with smoother surface morphological of TCC. The electrical resistivity and optical transmittance of the post-annealed sample improved significantly as compared to the as-deposited samples. The measured electrical resistivity and optical transmittance of the postannealed sample is 8.607 x 10^(-5) (Ohm)-cm and 95%, respectively resulted in high figure of merit of 5.91 x 10^(-2)(Ohm)^(-1).

Item Type:Article
Uncontrolled Keywords:Figure of merit; annealing; Ti/Al; indium tin oxides; sputtering; n-GaN
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
Divisions:Faculty of Science, Technology and Human Development > Department of Science
ID Code:8483
Deposited By:Mr. Mohammad Shaifulrip Ithnin
Deposited On:24 May 2017 15:57
Last Modified:24 May 2017 15:57

Repository Staff Only: item control page