Zalkepali, N U H H and Mahmud, N N H E N and Awang, N A and Muhammad, N A M and Zamri, A Z M (2023) Influence of thickness on tunability performance of plasma sputtered indium tin oxide as Q-switcher. Laser Physics, 33. pp. 1-9.
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Abstract
We successfully investigated the influence of thickness on the tunability performance of plasma-sputtered indium tin oxide (ITO) as a Q-switcher. ITO is coated using direct current magnetron sputtering techniques with sputtering times of 150 s, 250 s, and 350 s to generate excellent quality ITO. Filmetrics measures the thickness, yielding 17.80 nm, 30.70 nm, and 38.90 nm, respectively. A stable Q-switched pulse is achieved at an operating wavelength and peak power of 1562.30 nm and −6.47 dBm for the thickness of 17.80 nm, 1561.40 nm and −3.19 dBm for the thickness of 30.70 nm, and 1560.2 nm and −2.44 dBm for the thickness of 38.90 nm. The thickness of 38.90 nm exhibit a high repetition rate of 43.60 kHz and narrow pulse width of 4.83 µs compared to other thickness. Employing the tunable bandpass filter in the laser ring cavity gives the wide-tuning of the wavelength range of 19.69 nm, 31.86 nm, and 36.59 nm for the thickness of 17.80 nm, 30.70 nm, and 38.90 nm, respectively. The tunability of Q-switched with the thicknesses of 30.70 nm and 38.90 nm is realized in the region of C-band to L-band. Regarding the authors’ expertise, this seems to be the first proposed influence of thickness on the tunability of plasma sputtered ITO that serves as saturable absorber in a Q-switched pulse.
Item Type: | Article |
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Uncontrolled Keywords: | indium tin oxide, saturable absorber, Q-switched pulse, thickness |
Subjects: | T Technology > T Technology (General) |
Divisions: | Faculty of Applied Science and Technology > Department of Technology and Natural Resources |
Depositing User: | Mr. Mohamad Zulkhibri Rahmad |
Date Deposited: | 30 Jul 2023 07:10 |
Last Modified: | 30 Jul 2023 07:10 |
URI: | http://eprints.uthm.edu.my/id/eprint/9380 |
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