Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication

Lee, Mei Yee and Mat Jubadi, Wasuzarina (2020) Influences of InGaN quantum well thickness on the internal quantum efficiency for GaN LED visible Light communication. In: Advanced Computer Modelling and Electronics Engineering. Penerbit UTHM, pp. 71-82. ISBN 978-967-2389-92-7

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Abstract

Nowadays, semiconductor lighting industry has been developed rapidly throughout the world. Light emitting diodes (LEDs) are known as a compound semiconductor device that can emit visible light when there is an electron current passed through it. In recent years, the group III – nitride semiconductor compounds with gallium (Ga) have developed as the leading materials for manufacturing energy-efficient LED [1]. The reason of GaN becoming the trend is due to the excellent optical properties and it is able to emit a wide range of wavelengths in the visible spectrum at the efficiency which greater than traditional lighting technologies [2]. The group III – nitride semiconductor compounds are typically grown with wurtzite crystal structure which consists of a large band gap around 1.0 eV to 6.0 eV.

Item Type:	Book Section
Uncontrolled Keywords:	Computer simulation; Microelectronics; Medical electronics; Electrical engineering; Government publications--Malaysia
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics > TK7885-7895 Computer engineering. Computer hardware
Divisions:	Faculty of Electrical and Electronic Engineering > Department of Electronic Enngineering
Depositing User:	Mrs. Siti Noraida Miskan
Date Deposited:	02 Jan 2022 02:27
Last Modified:	02 Jan 2022 02:27
URI:	http://eprints.uthm.edu.my/id/eprint/2746

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